- Manufacture :
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- Qg - Gate Charge :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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100
In-stock
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IXYS | MOSFET 650V/80A Ultra Junction X2-Class | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 80 A | 38 mOhms | 2.7 V | 140 nC | Enhancement | HiPerFET | ||||
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 67 A | 38 mOhms | 4 V | 148 nC | Enhancement | Power MOS V | |||||
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30
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 67 A | 38 mOhms | 2 V | 225 nC | Enhancement | |||||
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12
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 67 A | 38 mOhms | 4 V | 148 nC | Enhancement |
