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Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STD5N52U
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RFQ
2,223
In-stock
STMicroelectronics MOSFET N-channel 525 V 4.4 A DPAK TO-220F 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 525 V 4.4 A 1.28 Ohms      
STF6N62K3
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RFQ
971
In-stock
STMicroelectronics MOSFET N-Ch, 620V-1.1ohms 5.5A 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 620 V 5.5 A 1.28 Ohms 3.75 V 34 nC Enhancement
STD6N62K3
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RFQ
2,500
In-stock
STMicroelectronics MOSFET N-Channel 620V 1.1 Ohms 5.5A 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 5.5 A 1.28 Ohms   34 nC Enhancement
STP6N62K3
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RFQ
790
In-stock
STMicroelectronics MOSFET N-channel 620V 1.1 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 620 V 5.5 A 1.28 Ohms   34 nC Enhancement
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