- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,498
In-stock
|
Infineon Technologies | MOSFET 200V SINGLE N-CH 55mOhms 91nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 55 mOhms | 5.5 V | 91 nC | Enhancement | ||||
|
|
142
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 94 A | 55 mOhms | Polar2 HiPerFET | ||||||
|
|
GET PRICE |
4,600
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 94 A | 55 mOhms | Polar2 HiPerFET | |||||
|
|
VIEW | Toshiba | MOSFET N-Ch Power MOSFET Transistor | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 49.2 A | 55 mOhms | 2.5 V | 160 nC | Enhancement | |||||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 70 Amp | 30 V | SMD/SMT | ISOTOP-4 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 70 A | 55 mOhms | Enhancement |
