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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPT65R033G7XTMA1
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31
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Infineon Technologies MOSFET 30 V SMD/SMT HSOF-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 69 A 33 mOhms 3 V 110 nC Enhancement CoolMOS
IRFS4321TRLPBF
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RFQ
106
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IR / Infineon MOSFET MOSFT 100V 96A 10mOhm 120nC Qg 30 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 150 V 85 A 12 mOhms 5 V 110 nC    
TK39A60W,S4VX
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RFQ
66
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Toshiba MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A 30 V Through Hole TO-220FP-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 38.8 A 55 mOhms 3.7 V 110 nC Enhancement  
TK39N60W,S1VF
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20,000
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Toshiba MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF 30 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 38.8 A 55 mOhms 2.7 V to 3.7 V 110 nC   DTMOSIV
TK39J60W5,S1VQ
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2
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Toshiba MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC 30 V Through Hole TO-3PN-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 38.8 A 55 mOhms 2.7 V to 3.7 V 110 nC Enhancement  
IRF7799L2TRPBF
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3,890
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IR / Infineon MOSFET 250V N-CH HEXFET 38mOhms 110nC 30 V SMD/SMT DirectFET-L8 - 55 C + 175 C Reel 1 Channel Si N-Channel 250 V 35 A 32 mOhms   110 nC Enhancement Directfet
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