- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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66
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.7 V | 110 nC | Enhancement | ||||
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20,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 2.7 V to 3.7 V | 110 nC | DTMOSIV | |||||
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2
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Toshiba | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 2.7 V to 3.7 V | 110 nC | Enhancement |
