- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
953
In-stock
|
Fairchild Semiconductor | MOSFET 600V 6.5A N-Chan FRFET UniFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.15 Ohms | 5 V | 20 nC | UniFET FRFET | |||||||
|
937
In-stock
|
STMicroelectronics | MOSFET P-Ch 500V 3 Ohm 2.8A Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 2.8 A | 4 Ohms | 20 nC | Enhancement | ||||||
|
904
In-stock
|
Fairchild Semiconductor | MOSFET 200V, 18A, 140mOhm UniFET FRFET MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 140 mOhms | 5 V | 20 nC | Enhancement | UniFET | ||||
|
567
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 14 A | 424 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||||
|
42
In-stock
|
IXYS | MOSFET POWER MOSFET N-CHANNEL 500V 8A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 800 mOhms | 5.5 V | 20 nC | Enhancement | PolarHV | ||||
|
1,201
In-stock
|
Toshiba | MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 380 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | |||||
|
285
In-stock
|
Toshiba | MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 327 mOhms | 3.7 V | 20 nC | Enhancement | ||||||
|
60
In-stock
|
Toshiba | MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC | 30 V | Through Hole | TO-220FP-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 327 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | |||||||
|
97
In-stock
|
Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 380 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | |||||
|
71
In-stock
|
Toshiba | MOSFET N-Ch MOS 10A 40V 25W 410pF 0.029 | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 450 V | 11 A | 500 mOhms | 20 nC | ||||||||
|
VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9.3 A | 430 mOhms | 2.5 V | 20 nC | Enhancement | |||||
|
46
In-stock
|
IXYS | MOSFET 1.1 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 1.1 Ohms | 5.5 V | 20 nC | Enhancement | PolarHV | ||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 700V 5.8A VSON-5 | 30 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 650 V | 5.8 A | 725 mOhms | 4 V | 20 nC | CoolMOS | |||||
|
VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 9.3 A | 460 mOhms | 2.5 V | 20 nC | Enhancement |