- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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937
In-stock
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STMicroelectronics | MOSFET P-Ch 500V 3 Ohm 2.8A Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 2.8 A | 4 Ohms | 20 nC | Enhancement | |||||
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1,201
In-stock
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Toshiba | MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 380 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 9.3 A | 460 mOhms | 2.5 V | 20 nC | Enhancement |