- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,447
In-stock
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STMicroelectronics | MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSF... | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5 A | 1.15 Ohms | 3 V | 12 nC | Enhancement | ||||
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3,183
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | ||||||
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2,464
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 1.9A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.8 Ohms | 3 V | 12 nC | CoolMOS | ||||
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227
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
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136
In-stock
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IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||
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615
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement | ||||
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GET PRICE |
9,990
In-stock
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onsemi | MOSFET NFET DPAK 2.6A 3.6R | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 3.3 Ohms | 4.5 V | 12 nC |
