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- Rds On - Drain-Source Resistance :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,183
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | ||||||
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9,990
In-stock
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onsemi | MOSFET NFET DPAK 2.6A 3.6R | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 3.3 Ohms | 4.5 V | 12 nC |