- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
25 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,447
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSF... | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5 A | 1.15 Ohms | 3 V | 12 nC | Enhancement | |||||
|
2,464
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 1.9A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.8 Ohms | 3 V | 12 nC | CoolMOS | |||||
|
755
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 900 mOhms | 3 V | 12 nC | Enhancement | ||||||
|
990
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 5 A | 1.15 Ohms | 3 V | 12 nC | Enhancement | ||||||
|
700
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 900 mOhms | 3 V | 12 nC | Enhancement | ||||||
|
770
In-stock
|
Fairchild Semiconductor | MOSFET NCH 800V 2A MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.9 Ohms | 5 V | 12 nC | QFET | |||||
|
1,242
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 185mOhms 12nC | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 2.6 A | 185 mOhms | 12 nC | Enhancement | ||||||
|
769
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 5 A | 1.15 Ohms | 3 V | 12 nC | Enhancement | ||||||
|
160
In-stock
|
IXYS | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||||
|
227
In-stock
|
IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||||
|
136
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
|
100
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
|
150
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 2.5 V | 12 nC | Enhancement | |||||
|
185
In-stock
|
IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Si | N-Channel | 650 V | 4 A | 550 mOhms | 3 V | 12 nC | Enhancement | |||||||
|
200
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
|
175
In-stock
|
IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||||
|
615
In-stock
|
Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement | |||||
|
387
In-stock
|
Toshiba | MOSFET N-Ch MOS 7A 500V 35W 600pF 1.22 | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 7 A | 1 Ohms | 4.4 V | 12 nC | |||||||
|
78
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | DTMOSIV | |||||
|
121
In-stock
|
Toshiba | MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement | ||||||
|
782
In-stock
|
Toshiba | MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 2.5 A | 5.6 Ohms | 12 nC | |||||||
|
GET PRICE |
9,990
In-stock
|
onsemi | MOSFET NFET DPAK 2.6A 3.6R | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 3.3 Ohms | 4.5 V | 12 nC | |||||
|
600
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 5 A | 1.15 Ohms | 3 V | 12 nC | Enhancement | ||||||
|
200
In-stock
|
IXYS | MOSFET 700V/4A Ultra Junct X2-Class MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
|
900
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 7 A | 730 mOhms | 3 V | 12 nC | Enhancement |