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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STF9N80K5
1+
$2.180
10+
$1.850
100+
$1.480
500+
$1.300
RFQ
755
In-stock
STMicroelectronics MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSF... 30 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 800 V 7 A 900 mOhms 3 V 12 nC Enhancement
STFI9N80K5
1+
$2.210
10+
$1.880
100+
$1.500
500+
$1.320
RFQ
700
In-stock
STMicroelectronics MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSF... 30 V Through Hole TO-281-3 - 55 C + 150 C   1 Channel Si N-Channel 800 V 7 A 900 mOhms 3 V 12 nC Enhancement
TK7A50D(STA4,Q,M)
1+
$1.500
10+
$1.200
100+
$0.929
500+
$0.821
RFQ
387
In-stock
Toshiba MOSFET N-Ch MOS 7A 500V 35W 600pF 1.22 30 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 500 V 7 A 1 Ohms 4.4 V 12 nC  
STP9N80K5
1+
$2.270
10+
$1.930
100+
$1.540
500+
$1.350
RFQ
900
In-stock
STMicroelectronics MOSFET POWER MOSFET 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 80 V 7 A 730 mOhms 3 V 12 nC Enhancement
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