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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFB30N120P
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IXYS MOSFET 30 Amps 1200V 0.35 Rds 30 V Through Hole PLUS-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1200 V 30 A 350 mOhms 6.5 V 310 nC Enhancement Polar, HiPerFET
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