- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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979
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 190 mOhms | 4 V | 68 nC | CoolMOS | ||||||
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696
In-stock
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STMicroelectronics | MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.2 Ohms | 41 nC | Enhancement | |||||
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778
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Ch Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.4 Ohms | Enhancement | ||||||
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214
In-stock
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STMicroelectronics | MOSFET N-channel 600 V 0.190 16A MDmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 220 mOhms | 3 V | 44 nC | |||||
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100
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | ||||
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475
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 8.7A TO220-3 CoolMOS CFD2 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | ||||||
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237
In-stock
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IXYS | MOSFET 650V/34A Ultra Junction X2-Class | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | |||||
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357
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 1.3 Ohms | 3 V | 39 nC | Enhancement | ||||
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150
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 210 mOhms | 3 V | 35 nC | Enhancement | ||||
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198
In-stock
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IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Si | N-Channel | 650 V | 2 A | 2.3 Ohms | 3 V | 4.3 nC | Enhancement | ||||||
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50
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 210 mOhms | 3 V | 35 nC | Enhancement | ||||
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185
In-stock
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IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Si | N-Channel | 650 V | 4 A | 550 mOhms | 3 V | 12 nC | Enhancement | ||||||
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185
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.1 Ohms | 3 V | 13.5 nC | Enhancement | ||||
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365
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.1 Ohms | 3 V | 13.5 nC | Enhancement | ||||
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175
In-stock
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IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
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27
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 135 mOhms | 3 V | 54 nC | Enhancement | ||||
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105
In-stock
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IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 4 A | 850 mOhms | 3 V | 8.3 nC | Enhancement | |||||
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48
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 14 A | 135 mOhms | 3 V | 54 nC | Enhancement | ||||
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70
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 250 mOhms | 3 V | 40 nC | Enhancement | ||||
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65
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.3 A | 170 mOhms | 2.5 V | 45 nC | Enhancement | ||||
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820
In-stock
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STMicroelectronics | MOSFET N-channel 650 V MDMesh M5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 150 mOhms | 50 nC | ||||||
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927
In-stock
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STMicroelectronics | MOSFET N-Channel 400V to 650V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 750 mOhms | 42 nC | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 168 mOhms | 3 V | 46 nC | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.3 Ohms | 35 nC | Enhancement |
