- Minimum Operating Temperature :
- Id - Continuous Drain Current :
-
- 1.4 A (1)
- 10 A (5)
- 10.2 A (1)
- 11 A (5)
- 11.5 A (1)
- 12 A (3)
- 13 A (1)
- 14 A (2)
- 15.8 A (2)
- 16 A (3)
- 17 A (1)
- 2 A (4)
- 2.4 A (1)
- 20 A (5)
- 22 A (3)
- 25 A (2)
- 3 A (2)
- 3.9 A (1)
- 30.8 A (1)
- 36 A (1)
- 37 A (1)
- 4 A (2)
- 4.5 A (2)
- 4.6 A (1)
- 4.8 A (1)
- 5 A (1)
- 5.5 A (1)
- 6.26 A (1)
- 6.5 A (1)
- 7 A (5)
- 7.1 A (1)
- 7.5 A (3)
- 7.7 A (1)
- 9.5 A (1)
- 9.7 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (1)
- 1.05 Ohms (1)
- 1.1 Ohms (2)
- 1.2 Ohms (2)
- 1.5 Ohms (1)
- 1.7 Ohms (1)
- 105 mOhms (1)
- 120 mOhms (1)
- 130 mOhms (1)
- 140 mOhms (1)
- 160 mOhms (1)
- 165 mOhms (1)
- 165 Ohms (1)
- 170 mOhms (1)
- 180 mOhms (1)
- 190 mOhms (3)
- 2 Ohms (3)
- 2.5 Ohms (2)
- 2.9 Ohms (1)
- 260 mOhms (2)
- 290 mOhms (1)
- 3.4 Ohms (1)
- 3.6 Ohms (1)
- 300 mOhms (1)
- 320 mOhms (1)
- 330 mOhms (1)
- 360 mOhms (1)
- 380 mOhms (4)
- 4.5 Ohms (1)
- 4.7 Ohms (1)
- 4.8 Ohms (1)
- 450 mOhms (2)
- 5.1 Ohms (1)
- 530 mOhms (2)
- 550 mOhms (2)
- 600 mOhms (1)
- 640 mOhms (1)
- 650 mOhms (3)
- 700 mOhms (1)
- 73 mOhms (2)
- 730 mOhms (1)
- 740 mOhms (2)
- 750 mOhms (1)
- 810 mOhms (1)
- 87 mOhms (1)
- 9 Ohms (1)
- 90 mOhms (1)
- 950 mOhms (2)
- 980 mOhms (1)
- Qg - Gate Charge :
68 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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1,456
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 530 mOhms | 5 V | 26 nC | UniFET | ||||||
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|
886
In-stock
|
Fairchild Semiconductor | MOSFET SupreMOS 16A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 170 mOhms | Enhancement | SupreMOS | |||||
|
|
476
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 600V Slow version | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 37 A | 87 mOhms | 3.5 V | 114 nC | Enhancement | SuperFET II | ||||
|
|
605
In-stock
|
Fairchild Semiconductor | MOSFET 600V NChannel MOSFET SupreMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 90 mOhms | 4 V | 86 nC | SupreMOS | ||||
|
|
1,283
In-stock
|
STMicroelectronics | MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 550 mOhms | 66 nC | Enhancement | |||||
|
|
7,880
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V 20 A Mdmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 165 mOhms | 3 V | 60 nC | |||||
|
|
2,362
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/600V 3A/3.6OHM | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 3.4 Ohms | Enhancement | QFET | |||||
|
|
1,869
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 2.5 Ohms | Enhancement | QFET | |||||
|
|
147,700
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Chl MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.9 A | 1 Ohms | Enhancement | SuperFET | |||||
|
|
1,258
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | SuperFET | |||||
|
|
779
In-stock
|
Fairchild Semiconductor | MOSFET 600V NCH MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | SuperFET FRFET | |||||
|
|
499
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 140 mOhms | Enhancement | SupreMOS | |||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET NCH 6V 7A FDMESH FDMesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 700 mOhms | Enhancement | ||||||
|
|
1,485
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.7 Ohms | Enhancement | QFET | |||||
|
|
9,252
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/600V/6.26 A QFET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.26 A | 1.5 Ohms | Enhancement | ||||||
|
|
583
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.05 Ohms | 5 V | 13 nC | UniFET | ||||||
|
|
407
In-stock
|
onsemi | MOSFET NFET 600V 10A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 650 mOhms | 47 nC | ||||||
|
|
439
In-stock
|
STMicroelectronics | MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 38 nC | Enhancement | |||||
|
|
994
In-stock
|
onsemi | MOSFET NFET 600V 6A 980 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.1 A | 980 mOhms | 3.9 V | 31 nC | |||||
|
|
385
In-stock
|
onsemi | MOSFET 600V 0.95 OHM TO- 220FP | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 950 mOhms | 4.5 V | 39 nC | |||||
|
|
186
In-stock
|
Fairchild Semiconductor | MOSFET 650V, 380mOhm SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.2 A | 330 mOhms | 3.5 V | 30 nC | Enhancement | ||||
|
|
1,950
In-stock
|
onsemi | MOSFET NFET 600V 4A 1.8 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.8 A | 2 Ohms | 3.9 V | 19 nC | |||||
|
|
169
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 600 mOhms | 5 V | 30 nC | Enhancement | ||||
|
|
33
In-stock
|
IXYS | MOSFET 10.0 Amps 600 V 0.74 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 740 mOhms | 5 V | 32 nC | Enhancement | PolarHV | |||
|
|
90
In-stock
|
IXYS | MOSFET HiPERFET Id10 BVdass600 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 740 mOhms | Enhancement | HyperFET | |||||
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138
In-stock
|
IXYS | MOSFET 3 Amps 600V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 2.9 Ohms | 5.5 V | 9.8 nC | Enhancement | PolarHV | |||
|
|
128
In-stock
|
IXYS | MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 5.1 Ohms | 5 V | 7 nC | Enhancement | PolarHV | |||
|
|
79
In-stock
|
IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | |||
|
|
266
In-stock
|
IXYS | MOSFET 1.4 Amps 600 V 8 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.4 A | 9 Ohms | 5.5 V | 5.2 nC | Enhancement | PolarHV | |||
|
|
49
In-stock
|
Toshiba | MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement |
