- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,022
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 900 mOhms | Enhancement | |||||||
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981
In-stock
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STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | ||||||
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1,569
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.76 Ohm 6AMDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 4 V | 16.5 nC | Enhancement | |||||
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106,800
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.95Ohm 6A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | ||||||
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977
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1.3 Ohms | 4 V | 21.5 nC | Enhancement | |||||
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1,820
In-stock
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Fairchild Semiconductor | MOSFET N-CH/400 /6A/CFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 6 A | 1.1 Ohms | Enhancement | QFET | ||||||
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863
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 1.9 Ohms | Enhancement | QFET | ||||||
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813
In-stock
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STMicroelectronics | MOSFET N-Ch 800V .95Ohm 6A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | |||||||
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932
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 6 A | 1 Ohms | Enhancement | QFET | ||||||
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8,590
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 2.3 Ohms | Enhancement | QFET | ||||||
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92
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | |||||
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920
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A PAK D | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC | |||||||
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VIEW | IXYS | MOSFET 6 Amps 500V 1.1 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 1.1 Ohms | Enhancement | |||||||
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626
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.76 Ohm 6 A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 4 V | 16.5 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 525V 0.95 Ohm 6A SuperFREDmesh3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 1.15 Ohms | 33 nC | Enhancement | ||||||
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953
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A DPAK D | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC |