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- Rds On - Drain-Source Resistance :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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182,100
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 24 mOhms | 70 nC | Enhancement | |||||
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573
In-stock
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IXYS | MOSFET 36 Amps 300V 0.11 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 36 A | 92 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | ||||
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2,200
In-stock
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STMicroelectronics | MOSFET N-channel 800 V 0.25 17A Mdmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 70 nC | |||||||
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351
In-stock
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STMicroelectronics | MOSFET N-channel 800 V MDMesh | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 295 mOhms | 70 nC | |||||||
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65,920
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 31A 82mOhm 70nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 5.5 V | 70 nC | Enhancement |