- Manufacture :
- Rds On - Drain-Source Resistance :
- Tradename :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,516
In-stock
|
STMicroelectronics | MOSFET N-Ch 500 Volt 7.2 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.2 A | 850 mOhms | 32 nC | Enhancement | ||||||
|
721
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | ||||||
|
112,000
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | ||||||
|
475
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A TO220-3 CoolMOS CFD2 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | |||||||
|
118
In-stock
|
IXYS | MOSFET 7 Amps 800V 1.44 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.44 Ohms | 5 V | 32 nC | Enhancement | Polar, HiPerFET | ||||
|
33
In-stock
|
IXYS | MOSFET 10.0 Amps 600 V 0.74 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 740 mOhms | 5 V | 32 nC | Enhancement | PolarHV |