MOSFET - Kaimeite

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5 products

PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
26NM60N	Per Unit $2.000		PDF RFQ	7,880 In-stock	STMicroelectronics	MOSFET N-channel 600 V 20 A Mdmesh	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	20 A	165 mOhms	3 V	60 nC
IRFB33N15DPBF	1+ $1.000 10+ $1.000 100+ $1.000 500+ $1.000		PDF RFQ	5,000 In-stock	Infineon Technologies	MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC	30 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	150 V	33 A	56 mOhms	5.5 V	60 nC	Enhancement
IRFB52N15DPBF		GET PRICE	PDF RFQ	58,200 In-stock	Infineon Technologies	MOSFET MOSFT 150V 60A 32mOhm 60nC	30 V	Through Hole	TO-220-3			Tube	1 Channel	Si	N-Channel	150 V	60 A	32 mOhms		60 nC
IRFB38N20DPBF		GET PRICE	PDF RFQ	8,500 In-stock	Infineon Technologies	MOSFET MOSFT 200V 44A 54mOhm 60nC	30 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	200 V	44 A	54 mOhms		60 nC	Enhancement
TK25E60X5,S1X	1+ $4.190 10+ $3.370 100+ $3.070 250+ $2.770		PDF RFQ	45 In-stock	Toshiba	MOSFET Power MOSFET N-Channel	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	25 A	120 mOhms	3 V	60 nC	Enhancement

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