- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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969
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 20 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 250 mOhms | Enhancement | ||||
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351
In-stock
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STMicroelectronics | MOSFET N-channel 800 V MDMesh | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 295 mOhms | 70 nC | ||||
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177
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 20 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 250 mOhms | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 11 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 450 mOhms | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 20 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 290 mOhms | Enhancement |
