- Manufacture :
- Mounting Style :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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953
In-stock
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Fairchild Semiconductor | MOSFET 600V 6.5A N-Chan FRFET UniFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.15 Ohms | 5 V | 20 nC | UniFET FRFET | ||||||
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904
In-stock
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Fairchild Semiconductor | MOSFET 200V, 18A, 140mOhm UniFET FRFET MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 140 mOhms | 5 V | 20 nC | Enhancement | UniFET | |||
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60
In-stock
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Toshiba | MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC | 30 V | Through Hole | TO-220FP-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 327 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | ||||||
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71
In-stock
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Toshiba | MOSFET N-Ch MOS 10A 40V 25W 410pF 0.029 | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 450 V | 11 A | 500 mOhms | 20 nC | |||||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9.3 A | 430 mOhms | 2.5 V | 20 nC | Enhancement |
