Build a global manufacturer and supplier trusted trading platform.
8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXFK60N55Q2
1+
$24.940
5+
$24.680
10+
$23.000
25+
$21.970
RFQ
24
In-stock
IXYS MOSFET 60 Amps 550V 0.09 Rds 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 60 A 88 mOhms Enhancement HyperFET
IXFX60N55Q2
1+
$24.940
5+
$24.680
10+
$23.000
25+
$21.970
VIEW
RFQ
IXYS MOSFET 60 Amps 550V 0.09 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 60 A 88 mOhms Enhancement HyperFET
IXFB72N55Q2
1+
$29.940
5+
$29.630
10+
$27.610
25+
$26.370
VIEW
RFQ
IXYS MOSFET 72 Amps 550V 0.07 Rds 30 V Through Hole PLUS-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 72 A 72 mOhms Enhancement HyperFET
IXFN72N55Q2
10+
$35.050
30+
$33.480
100+
$29.930
250+
$28.550
VIEW
RFQ
IXYS MOSFET 72 Amps 550 V 0.07 Rds 30 V Chassis Mount SOT-227-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 72 A 72 mOhms Enhancement HyperFET
IXFH36N55Q
30+
$11.330
120+
$9.980
270+
$9.490
510+
$8.880
VIEW
RFQ
IXYS MOSFET 36 Amps 550V 0.16 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 36 A 160 mOhms Enhancement HyperFET
IXFH36N55Q2
30+
$14.340
120+
$12.640
270+
$12.020
510+
$11.240
VIEW
RFQ
IXYS MOSFET 36 Amps 550V 0.16 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 36 A 180 mOhms Enhancement HyperFET
IXFH26N55Q
30+
$8.000
120+
$6.950
270+
$6.640
510+
$6.050
VIEW
RFQ
IXYS MOSFET 26 Amps 550V 0.23 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 26 A 230 mOhms Enhancement HyperFET
IXTQ24N55Q
30+
$6.690
120+
$5.810
270+
$5.550
510+
$5.060
VIEW
RFQ
IXYS MOSFET 24 Amps 550V 0.270 Rds 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 24 A 270 mOhms Enhancement  
Page 1 / 1