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7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FDB12N50FTM_WS
1+
$1.540
10+
$1.320
100+
$1.010
500+
$0.891
800+
$0.704
RFQ
2,160
In-stock
Fairchild Semiconductor MOSFET 500V 11.5A 0.7Ohm N-Channel 30 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 11.5 A 590 mOhms     Enhancement  
FDB12N50TM
GET PRICE
RFQ
179,900
In-stock
Fairchild Semiconductor MOSFET 500V N-CH MOSFET 30 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 11.5 A 550 mOhms     Enhancement  
FDPF12N50FT
1+
$1.910
10+
$1.620
100+
$1.300
500+
$1.140
RFQ
626
In-stock
Fairchild Semiconductor MOSFET 500V N-Channel 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 11.5 A 700 mOhms     Enhancement UniFET
TK12A60W,S4VX
1+
$4.000
10+
$3.210
100+
$2.930
250+
$2.640
RFQ
298
In-stock
Toshiba MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC 30 V Through Hole TO-220FP-3       1 Channel Si N-Channel 600 V 11.5 A 265 mOhms 2.7 V to 3.7 V 25 nC Enhancement  
TK12E60W,S1VX
1+
$3.080
10+
$2.470
100+
$2.250
250+
$2.030
RFQ
323
In-stock
Toshiba MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC 30 V Through Hole TO-220-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 11.5 A 300 mOhms 2.7 V to 3.7 V 25 nC Enhancement  
TK12P60W
1+
$2.810
10+
$2.260
100+
$1.950
250+
$1.850
2000+
$1.310
RFQ
23,600
In-stock
Toshiba MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 11.5 A 340 mOhms 2.7 V to 3.7 V 25 nC   DTMOSIV
TK12Q60W,S1VQ
75+
$2.430
150+
$1.950
300+
$1.850
525+
$1.700
VIEW
RFQ
Toshiba MOSFET DTMOSIV 600V 340mOhm 11.5A 100W 890pF 30 V Through Hole TO-251-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 11.5 A 265 mOhms 2.7 V to 3.7 V 25 nC   DTMOSIV
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