- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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24,853
In-stock
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onsemi | MOSFET 20V/6V P CH T1 780mA 0.4 | 6 V | SMD/SMT | SOT-723-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 780 mA | 380 mOhms | Enhancement | |||||||
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2,102
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | 3.5 V | 34 nC | SuperFET II | |||||
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823
In-stock
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Fairchild Semiconductor | MOSFET HIGH POWER | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | SuperFET | ||||||
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871
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||||||
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695
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 11.6A D2PAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 11.6 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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529
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 14 Amp Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 14 A | 380 mOhms | 69 nC | Enhancement | ||||||
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630
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 10.6A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 380 mOhms | 39 nC | CoolMOS | ||||||
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1,201
In-stock
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Toshiba | MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 380 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | |||||
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2,400
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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5,000
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||||||
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8,000
In-stock
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onsemi | MOSFET 20V/6V P CH T1 780mA 0.4 | 6 V | SMD/SMT | SOT-723-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 780 mA | 380 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 18 A | 380 mOhms | Enhancement | HyperFET | ||||||
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218
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.32Ohm 11A MDmesh II Plus | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 4 V | 24.5 nC | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS S5 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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1,403
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 380 mOhms | 3 V | 32 nC | ||||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 10.6A DPAK-2 CoolMOS E6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 380 mOhms | 39 nC | CoolMOS |