- Package / Case :
- Qg - Gate Charge :
- Tradename :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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823
In-stock
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Fairchild Semiconductor | MOSFET HIGH POWER | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | SuperFET | ||||||
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871
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||||||
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2,400
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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5,000
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | ||||||
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218
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.32Ohm 11A MDmesh II Plus | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 4 V | 24.5 nC | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS S5 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS |