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Vgs - Gate-Source Voltage :
Package / Case :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FCB11N60TM
1+
$3.160
10+
$2.680
100+
$2.330
250+
$2.210
800+
$1.670
RFQ
823
In-stock
Fairchild Semiconductor MOSFET HIGH POWER 30 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 11 A 380 mOhms     Enhancement SuperFET
STB13N60M2
1+
$2.430
10+
$2.070
100+
$1.650
500+
$1.450
1000+
$1.200
RFQ
871
In-stock
STMicroelectronics MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 25 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 11 A 380 mOhms 3 V 17 nC    
SPB11N60C3
1+
$2.680
10+
$2.280
100+
$1.980
250+
$1.880
1000+
$1.420
RFQ
2,400
In-stock
Infineon Technologies MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 11 A 380 mOhms     Enhancement CoolMOS
STD13N60M2
1+
$2.240
10+
$1.900
100+
$1.520
500+
$1.340
2500+
$1.030
RFQ
5,000
In-stock
STMicroelectronics MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 25 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 11 A 380 mOhms 3 V 17 nC    
STD13NM60ND
1+
$3.420
10+
$2.910
100+
$2.520
250+
$2.390
2500+
$1.720
RFQ
218
In-stock
STMicroelectronics MOSFET N-CH 600V 0.32Ohm 11A MDmesh II Plus 25 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 11 A 380 mOhms 4 V 24.5 nC    
SPB11N60S5
1000+
$1.510
2000+
$1.440
5000+
$1.380
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS S5 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 11 A 380 mOhms     Enhancement CoolMOS
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