- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9,421
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 33 mOhms | Enhancement | PowerTrench | ||||||
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2,024
In-stock
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Fairchild Semiconductor | MOSFET PT5 150V/20V Nch Power Trench MOSFET | SMD/SMT | Power-56-8 | + 150 C | Reel | Si | N-Channel | 150 V | 42 A | 33 mOhms | 25 nC | PowerTrench | |||||||||
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31
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 69 A | 33 mOhms | 3 V | 110 nC | Enhancement | CoolMOS | ||||
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2,805
In-stock
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onsemi | MOSFET NCH 0.9V DRIVE SERIE | 5 V | SMD/SMT | SOT-323-3 | - 5 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.5 A | 33 mOhms | 300 mV | 11 nC | Enhancement | |||||
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3,395
In-stock
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Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | Enhancement | |||||||
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3,057
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 1496pF 14.4nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.5 A | 33 mOhms | - 1.1 V | 14.4 nC | Enhancement | PowerDI | ||||
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2,465
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40mOhm -25V -5.2A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 4 A | 33 mOhms | - 1.1 V | 6 nC | Enhancement | |||||
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1,141
In-stock
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Texas instruments | MOSFET PCh NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 33 mOhms | - 800 mV | 3.4 nC | NexFET | |||||
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8,995
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 U-DFN2020-6 T&R 3K | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6 A | 33 mOhms | - 2.2 V | 23.2 nC | Enhancement | |||||
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3,000
In-stock
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onsemi | MOSFET PFET TSOP6 20V/8V TR | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.1 A | 33 mOhms | Enhancement | |||||||
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3,000
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 33 mOhms | 1.2 V | 20 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.2 A | 33 mOhms | Enhancement | OptiMOS | ||||||
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VIEW | IXYS | MOSFET 72 Amps 200 V 0.033 W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 33 mOhms | Enhancement | |||||||
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2,788
In-stock
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Texas instruments | MOSFET P-Channel NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 33 mOhms | 4.3 nC | NexFET |