- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Tradename :
38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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8,273
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 1 Ohms | Enhancement | ||||||
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4,717
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 660mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 660 mA | 1 Ohms | - 2.1 V | 14 nC | Depletion | ||||
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30,227
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K | 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 700 mA | 1 Ohms | - 1 V | 0.5 nC | Enhancement | ||||
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3,293
In-stock
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STMicroelectronics | MOSFET N-Ch 400 Volt 5.4 A Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 5.4 A | 1 Ohms | Enhancement | ||||||
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2,452
In-stock
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Diodes Incorporated | MOSFET Transistor PNP 30Vceo | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 3.9 A | 1 Ohms | 2.9 V | 13.9 nC | Enhancement | PowerDI | |||
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53,920
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.2A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.2 A | 1 Ohms | 3 V | 15 nC | CoolMOS | ||||
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11,695
In-stock
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onsemi | MOSFET 20V 300mA N-Channel | 20 V | SMD/SMT | SC-70-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 300 mA | 1 Ohms | Enhancement | ||||||
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2,679
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel Advance QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 4.5 A | 1 Ohms | Enhancement | ||||||
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1,837
In-stock
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Fairchild Semiconductor | MOSFET N-CH/600V/7A/ SuperFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.9 A | 1 Ohms | Enhancement | SuperFET | |||||
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8,084
In-stock
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onsemi | MOSFET PFET 20V .88A 1OHM | 20 V, 12 V | SMD/SMT | SC-70-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 20 V | 250 mA | 1 Ohms | 0.9 nC, 2.2 nC | Enhancement | |||||
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395
In-stock
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IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | Enhancement | ||||||
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3,587
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 1A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1 A | 1 Ohms | - 2 V | 12.4 nC | Enhancement | ||||
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798
In-stock
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Fairchild Semiconductor | MOSFET 600V 7.4A 1Ohm N-Channel | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | QFET | |||||
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GET PRICE |
114,510
In-stock
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onsemi | MOSFET COMP 540mA 20V | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA, - 430 mA | 1 Ohms | 1 V | 1.5 nC, 1.7 nC | Enhancement | |||
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1,599
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 140mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 660 mA | 1 Ohms | - 2.1 V | 14 nC | Depletion | ||||
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3,222
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.3A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.3 A | 1 Ohms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
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19,640
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 1 Ohms | - 1 V | 0.8 nC | Enhancement | ||||
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GET PRICE |
289,640
In-stock
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onsemi | MOSFET NFET SOT23 60V 310MA 2.5 | 30 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 1 Ohms | 1.9 V | 810 pC | Enhancement | |||
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4,620
In-stock
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Diodes Incorporated | MOSFET MOSFET P-CHANNEL SOT-523 | 6 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 460 mA | 1 Ohms | 622.4 pC | ||||||
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12,256
In-stock
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Nexperia | MOSFET MOSFET N-CH DUAL 60V | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 320 mA | 1 Ohms | 0.6 nC | Enhancement | |||||
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2,800
In-stock
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Fairchild Semiconductor | MOSFET Dual N/P Channel FET Enhancement Mode | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 510 mA | 1 Ohms | Enhancement | ||||||
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6,698
In-stock
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onsemi | MOSFET -20V -430mA Dual P-Channel | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 430 mA | 1 Ohms | Enhancement | ||||||
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2,241
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 660mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 660 mA | 1 Ohms | 800 mV | 16.1 nC | Enhancement | ||||
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761
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | ||||||
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959
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 660mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 660 mA | 1 Ohms | - 2.1 V | 14 nC | Depletion | ||||
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1,248
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 660mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 660 mA | 1 Ohms | 800 mV | 16.1 nC | Enhancement | ||||
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5,745
In-stock
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Nexperia | MOSFET 30V 400 MA DUAL N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 400 mA | 1 Ohms | 0.52 nC | ||||||
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527
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 140mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 660 mA | 1 Ohms | - 2.1 V | 14 nC | Depletion | ||||
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9,900
In-stock
|
Nexperia | MOSFET BSS138BK/TO-236AB/REEL 11" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 360 mA | 1 Ohms | 480 mV | 700 pC | Enhancement | ||||
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17,206
In-stock
|
Nexperia | MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 1 Ohms | 0.6 nC | Enhancement |
