- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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8,084
In-stock
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onsemi | MOSFET PFET 20V .88A 1OHM | 20 V, 12 V | SMD/SMT | SC-70-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 20 V | 250 mA | 1 Ohms | 0.9 nC, 2.2 nC | Enhancement | |||||
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114,510
In-stock
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onsemi | MOSFET COMP 540mA 20V | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA, - 430 mA | 1 Ohms | 1 V | 1.5 nC, 1.7 nC | Enhancement | |||
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12,256
In-stock
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Nexperia | MOSFET MOSFET N-CH DUAL 60V | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 320 mA | 1 Ohms | 0.6 nC | Enhancement | |||||
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2,800
In-stock
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Fairchild Semiconductor | MOSFET Dual N/P Channel FET Enhancement Mode | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 510 mA | 1 Ohms | Enhancement | ||||||
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6,698
In-stock
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onsemi | MOSFET -20V -430mA Dual P-Channel | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 430 mA | 1 Ohms | Enhancement | ||||||
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5,745
In-stock
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Nexperia | MOSFET 30V 400 MA DUAL N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 400 mA | 1 Ohms | 0.52 nC | ||||||
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4,000
In-stock
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Nexperia | MOSFET 60/50V, 330/170 mA N/P-ch Trench MOSFET | +/- 20 V, +/- 20 V | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 50 V | 5 A | 1 Ohms | 1.6 V, - 1.6 V | 0.2 nC, 0.12 nC | Enhancement |