- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,462
In-stock
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onsemi | MOSFET T1 60V PCH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.1 A | 183 mOhms | - 2.5 V | 4.3 nC | Enhancement | ||||
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1,657
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12.5 A | 10 mOhms | - 2.5 V | 33 nC | Enhancement | ||||
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1,593
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 52 A | 10 mOhms | - 2.5 V | 33 nC | Enhancement | |||||
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2,050
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | +/- 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.1 A | 7 mOhms | - 2.5 V | 47.5 nC | Enhancement | ||||
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892
In-stock
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STMicroelectronics | MOSFET Automotive-grade P-channel 40 V, 0.013 Ohm typ., 46 A STripF... | +/- 18 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 17 mOhms | - 2.5 V | 65.5 nC | Enhancement | STripFET | |||
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1,401
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 14 mOhms | - 2.5 V | 91 nC | Enhancement | ||||
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3,797
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 20 mOhms | - 2.5 V | 35.4 nC | Enhancement | ||||
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2,235
In-stock
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Nexperia | MOSFET 30 V, P-channel Trench MOSFET | +/- 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.4 A | 100 mOhms | - 2.5 V | 11 nC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.7 A | 13 mOhms | - 2.5 V | 16.5 nC | Enhancement | PowerDI | |||
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580
In-stock
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Nexperia | MOSFET PMPB48EP/SOT1220/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.8 A | 40 mOhms | - 2.5 V | 26 nC | Enhancement | ||||
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11,993
In-stock
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Siliconix / Vishay | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.6 A | 0.068 Ohms | - 2.5 V | 16 nC | Enhancement | ||||
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3,930
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 DI5060-8 T&R 2.5K | 25 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.5 A | 15 mOhms | - 2.5 V | 47.5 nC | Enhancement | ||||
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2,611
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 13.5 mOhms | - 2.5 V | 110 nC |
