- Manufacture :
- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,050
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | +/- 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.1 A | 7 mOhms | - 2.5 V | 47.5 nC | Enhancement | |||
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3,797
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 20 mOhms | - 2.5 V | 35.4 nC | Enhancement | |||
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2,611
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 13.5 mOhms | - 2.5 V | 110 nC |
