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Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPS65R1K0CEAKMA1
1+
$0.650
10+
$0.538
100+
$0.347
1000+
$0.278
RFQ
3,222
In-stock
Infineon Technologies MOSFET N-Ch 650V 4.3A IPAK-3 20 V SMD/SMT TO-251-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 650 V 4.3 A 1 Ohms 2.5 V 15.3 nC Enhancement CoolMOS
IPD60R1K0CEATMA1
1+
$0.620
10+
$0.521
100+
$0.336
1000+
$0.269
2500+
$0.227
RFQ
2,319
In-stock
Infineon Technologies MOSFET N-Ch 600V 4.3A DPAK-2 20 V SMD/SMT TO-252-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 600 V 4.3 A 1 Ohms 2.5 V 13 nC Enhancement CoolMOS
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