- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 1.6 A (1)
- 1.7 A (1)
- 10 A (1)
- 10.1 A (1)
- 10.5 A (1)
- 10.6 A (6)
- 100 A (2)
- 11 A (4)
- 11.1 A (1)
- 110 A (1)
- 116 A (1)
- 12 A (1)
- 12.5 A (1)
- 13.7 A (1)
- 13.8 A (4)
- 130 A (1)
- 14 A (2)
- 14.1 A (2)
- 15 A (3)
- 15.1 A (1)
- 155 A (1)
- 16 A (2)
- 16.1 A (4)
- 17 A (4)
- 18.1 A (2)
- 191 A (1)
- 2 A (1)
- 2.4 A (2)
- 2.6 A (3)
- 20.2 A (2)
- 200 mA (1)
- 21 A (2)
- 23 A (2)
- 23.8 A (2)
- 25 A (2)
- 3 A (1)
- 3.1 A (3)
- 3.2 A (3)
- 3.6 A (2)
- 3.7 A (2)
- 30 A (1)
- 31 A (4)
- 310 mA (1)
- 38 A (2)
- 4 A (1)
- 4.3 A (2)
- 4.4 A (1)
- 4.5 A (2)
- 4.8 A (2)
- 42 A (1)
- 43 A (1)
- 44 A (1)
- 5 A (2)
- 5.3 A (1)
- 5.4 A (1)
- 5.6 A (1)
- 5.7 A (1)
- 5.8 A (1)
- 500 mA (1)
- 6 A (2)
- 6.1 A (1)
- 6.6 A (3)
- 6.8 A (3)
- 64 A (1)
- 66 A (1)
- 7 A (2)
- 7.3 A (4)
- 7.6 A (2)
- 75 A (1)
- 750 mA (1)
- 77 A (1)
- 8 A (1)
- 8.5 A (1)
- 8.9 A (1)
- 80 A (1)
- 800 mA (1)
- 88 A (1)
- 9 A (4)
- 9.1 A (1)
- 9.3 A (1)
- 9.9 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (2)
- 1.15 Ohms (1)
- 1.26 Ohms (5)
- 1.33 Ohms (1)
- 1.4 mOhms (1)
- 1.5 Ohms (2)
- 1.52 Ohms (1)
- 1.8 Ohms (3)
- 1.87 Ohms (1)
- 10 mOhms (1)
- 110 mOhms (3)
- 130 mOhms (2)
- 140 mOhms (2)
- 15 mOhms (1)
- 150 mOhms (2)
- 16 mOhms (2)
- 17 mOhms (1)
- 17 Ohms (1)
- 170 mOhms (2)
- 18 mOhms (1)
- 180 mOhms (4)
- 2 mOhms (1)
- 2 Ohms (1)
- 2.22 Ohms (1)
- 2.3 mOhms (1)
- 2.34 Ohms (1)
- 2.4 mOhms (1)
- 2.7 Ohms (2)
- 21.6 mOhms (1)
- 22 mOhms (1)
- 220 mOhms (3)
- 230 mOhms (4)
- 24 mOhms (1)
- 250 mOhms (6)
- 270 mOhms (4)
- 280 mOhms (2)
- 290 mOhms (1)
- 3 Ohms (1)
- 3.28 Ohms (1)
- 3.3 Ohms (1)
- 3.4 Ohms (1)
- 3.51 Ohms (3)
- 300 mOhms (1)
- 32 mOhms (1)
- 320 mOhms (1)
- 340 mOhms (4)
- 350 mOhms (4)
- 360 mOhms (2)
- 37 mOhms (1)
- 4 Ohms (1)
- 4.68 Ohms (1)
- 4.91 Ohms (1)
- 40 mOhms (1)
- 450 mOhms (1)
- 460 mOhms (2)
- 480 mOhms (1)
- 490 mOhms (1)
- 5.5 mOhms (1)
- 540 mOhms (6)
- 590 mOhms (2)
- 594 mOhms (2)
- 6 mOhms (1)
- 660 mOhms (1)
- 670 mOhms (1)
- 680 mOhms (1)
- 7.02 Ohms (1)
- 7.3 Ohms (1)
- 7.96 Ohms (1)
- 70 mOhms (1)
- 720 mOhms (1)
- 740 mOhms (1)
- 8 mOhms (1)
- 800 mOhms (1)
- 820 mOhms (1)
- 850 mOhms (1)
- 855 mOhms (2)
- 860 mOhms (4)
- 89 mOhms (2)
- 890 mOhms (1)
- 9.9 mOhms (1)
- 90 mOhms (4)
- 910 mOhms (1)
- Qg - Gate Charge :
-
- 0.3 nC, 0.28 nC (1)
- 0.7 nC (1)
- 10.5 nC (9)
- 100 nC (1)
- 103 nC (1)
- 11 nC (1)
- 110 nC (2)
- 12.4 nC (2)
- 12.5 nC (1)
- 120 nC (1)
- 123 nC (1)
- 127 nC (2)
- 13 nC (4)
- 14.3 nC (1)
- 145 nC (1)
- 15 nC (4)
- 15.3 nC (3)
- 150 nC (1)
- 16 nC (1)
- 16.1 nC (1)
- 16.4 nC (1)
- 17 nC (2)
- 17.2 nC (2)
- 170 nC (1)
- 18.7 nC (1)
- 190 nC (1)
- 20 nC (1)
- 20.5 nC (4)
- 22 nC (2)
- 23 nC (5)
- 24.8 nC (2)
- 25 nC (2)
- 255 nC (1)
- 260 nC (2)
- 28 nC (1)
- 29 nC (4)
- 32 nC (2)
- 32.6 nC (2)
- 35 nC (2)
- 37 nC (1)
- 38.6 nC (1)
- 39 nC (3)
- 4.3 nC (3)
- 4.6 nC (1)
- 4.7 nC (1)
- 4.9 nC (1)
- 43 nC (4)
- 44 nC (3)
- 45 nC (6)
- 52 nC (2)
- 58 nC (1)
- 6 nC (3)
- 6.7 nC (2)
- 6.8 nC (1)
- 63 nC (2)
- 64 nC (2)
- 7 nC (1)
- 7.4 nC (1)
- 7.8 nC (1)
- 70 nC (2)
- 75 nC (2)
- 78 nC (1)
- 8.2 nC (3)
- 8.3 nC (1)
- 80 nC (4)
- 88 nC (2)
- 9.4 nC (3)
- 90 nC (1)
- 94 nC (2)
140 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
5,435
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
|
26,110
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
|
|
2,139
In-stock
|
Fairchild Semiconductor | MOSFET PT7 80V/20V Nch Power Trench | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 130 A | 2 mOhms | 2.5 V | 110 nC | Enhancement | PowerTrench Power Clip | |||
|
|
2,398
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60/20v SG, N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 155 A | 1.4 mOhms | 2.5 V | 110 nC | Enhancement | PowerTrench Power Clip | |||
|
|
1,210
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 290mOhm D2PAK PKG | 20 V, 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
|
|
1,717
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET3 650V 70mOhm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 44 A | 70 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
|
|
1,243
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
771
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS | |||
|
|
5,095
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 44nC | 16 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 88 A | 9.9 mOhms | 2.5 V | 44 nC | |||||
|
|
800
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
1,055
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
|
569
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
41,780
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 20.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 540 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | |||
|
|
341
In-stock
|
IXYS | MOSFET Linear Extended FBSOA Power MOSFET | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | |||||
|
|
4,226
In-stock
|
onsemi | MOSFET NFET 30V 191A 2MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 191 A | 2.3 mOhms | 2.5 V | 88 nC | Enhancement | ||||
|
|
1,153
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
|
|
738
In-stock
|
Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 44 nC | Enhancement | CoolMOS | |||
|
|
988
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 5.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | |||
|
|
163
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
|
|
962
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS | |||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
|
2,360
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
|
2,490
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
|
100
In-stock
|
IXYS | MOSFET | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 250 V | 100 A | 17 mOhms | 2.5 V | 255 nC | Enhancement | GigaMOS, HiperFET | ||||
|
|
7,652
In-stock
|
Diodes Incorporated | MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA | 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 500 mA | 4 Ohms | 2.5 V | 0.3 nC, 0.28 nC | Enhancement | ||||
|
|
2,712
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850mOhm Zener | 20 V, 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.4 Ohms | 2.5 V | 7.4 nC | Enhancement | SuperFET II | |||
|
|
983
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
|
1,290
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 540 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS |
