- Package / Case :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 1.7 A (1)
- 10.1 A (1)
- 10.6 A (4)
- 11 A (4)
- 12 A (1)
- 12.5 A (1)
- 13.8 A (4)
- 14.1 A (2)
- 15 A (2)
- 15.1 A (1)
- 16 A (2)
- 16.1 A (4)
- 17 A (2)
- 18.1 A (1)
- 2.4 A (2)
- 2.6 A (2)
- 20.2 A (2)
- 21 A (2)
- 23 A (2)
- 23.8 A (2)
- 25 A (2)
- 3.1 A (3)
- 3.2 A (3)
- 3.7 A (1)
- 31 A (4)
- 38 A (2)
- 4 A (1)
- 4.3 A (2)
- 4.4 A (1)
- 4.5 A (2)
- 4.8 A (1)
- 5 A (2)
- 5.3 A (1)
- 5.4 A (1)
- 5.6 A (1)
- 5.7 A (1)
- 6 A (1)
- 6.1 A (1)
- 6.6 A (3)
- 6.8 A (2)
- 7 A (2)
- 7.3 A (4)
- 7.6 A (2)
- 8.5 A (1)
- 9 A (3)
- 9.1 A (1)
- 9.9 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (2)
- 1.15 Ohms (1)
- 1.26 Ohms (4)
- 1.5 Ohms (2)
- 1.52 Ohms (1)
- 1.8 Ohms (1)
- 1.87 Ohms (1)
- 110 mOhms (2)
- 130 mOhms (2)
- 140 mOhms (2)
- 150 mOhms (2)
- 170 mOhms (2)
- 180 mOhms (4)
- 2.22 Ohms (1)
- 2.34 Ohms (1)
- 2.7 Ohms (1)
- 220 mOhms (1)
- 230 mOhms (4)
- 250 mOhms (5)
- 270 mOhms (4)
- 280 mOhms (2)
- 3.28 Ohms (1)
- 3.51 Ohms (3)
- 300 mOhms (1)
- 340 mOhms (4)
- 350 mOhms (3)
- 360 mOhms (2)
- 4.68 Ohms (1)
- 4.91 Ohms (1)
- 450 mOhms (1)
- 460 mOhms (1)
- 490 mOhms (1)
- 540 mOhms (6)
- 590 mOhms (1)
- 594 mOhms (2)
- 680 mOhms (1)
- 7.02 Ohms (1)
- 7.96 Ohms (1)
- 720 mOhms (1)
- 740 mOhms (1)
- 800 mOhms (1)
- 855 mOhms (2)
- 860 mOhms (4)
- 89 mOhms (2)
- 90 mOhms (4)
- Qg - Gate Charge :
-
- 10.5 nC (9)
- 12.4 nC (2)
- 127 nC (2)
- 13 nC (4)
- 15 nC (2)
- 15.3 nC (3)
- 16.4 nC (1)
- 17.2 nC (2)
- 18.7 nC (1)
- 20.5 nC (4)
- 22 nC (1)
- 23 nC (5)
- 24.8 nC (2)
- 28 nC (1)
- 29 nC (4)
- 32 nC (2)
- 32.6 nC (1)
- 35 nC (1)
- 39 nC (3)
- 4.3 nC (2)
- 4.6 nC (1)
- 4.7 nC (1)
- 43 nC (4)
- 44 nC (2)
- 45 nC (6)
- 52 nC (2)
- 6 nC (1)
- 6.7 nC (2)
- 6.8 nC (1)
- 63 nC (2)
- 64 nC (2)
- 70 nC (2)
- 75 nC (2)
- 8.2 nC (2)
- 80 nC (4)
- 9.4 nC (3)
- 94 nC (2)
91 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
5,435
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
|
26,110
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
|
|
1,243
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
771
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS | |||
|
|
800
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
1,055
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
|
569
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
41,780
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 20.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 540 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | |||
|
|
1,153
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
|
|
738
In-stock
|
Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 44 nC | Enhancement | CoolMOS | |||
|
|
988
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 5.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | |||
|
|
163
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
|
|
962
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS | |||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
|
2,360
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
|
2,490
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
|
983
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
|
1,290
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 540 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | |||
|
|
740
In-stock
|
Infineon Technologies | MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 180 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
|
|
1,145
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
|
2,477
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
|
|
980
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
|
624
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
|
2,427
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 3.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.2 A | 1.26 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
|
|
GET PRICE |
4,820
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.8 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||
|
|
3,222
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 4.3A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.3 A | 1 Ohms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
|
GET PRICE |
14,570
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 5.4 A | 3.51 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS |
