- Manufacture :
- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
40 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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26,110
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | ||||
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1,210
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290mOhm D2PAK PKG | 20 V, 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | ||||
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1,717
In-stock
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Fairchild Semiconductor | MOSFET SuperFET3 650V 70mOhm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 44 A | 70 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | ||||
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1,243
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | ||||
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771
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS | ||||
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800
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | ||||
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1,055
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||||
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569
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | ||||
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1,153
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||||
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738
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | ||||
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988
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | ||||
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962
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS | ||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||||
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983
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | ||||
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1,290
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 540 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | ||||
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740
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 180 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||||
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1,145
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||||
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170
In-stock
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IXYS | MOSFET MOSFET N CHANNEL | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 24 mOhms | 2.5 V | 103 nC | Enhancement | |||||
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980
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | ||||
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624
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | ||||
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1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||||
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29
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | |||||
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216
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||||
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86
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 15 A | 480 mOhms | 2.5 V | 123 nC | Enhancement | LinearL2 | ||||
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25
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.5 kV | 3 A | 7.3 Ohms | 2.5 V | 38.6 nC | Enhancement | ||||||
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44
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | ||||
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101
In-stock
|
IXYS | MOSFET High Voltage Power MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms | 2.5 V | 7.8 nC | Enhancement | ||||||
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3,374
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | ||||
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2,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | ||||
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS |