- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,949
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 81 A | 4.5 mOhms | 2 V | 34 nC | Enhancement | OptiMOS | |||
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40,000
In-stock
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IR / Infineon | MOSFET MOSFT 30V 13A 8mOhm 34nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.5 mOhms | 2 V | 34 nC | |||||
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GET PRICE |
48,410
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 81 A | 4.5 mOhms | 2 V | 34 nC | Enhancement | OptiMOS | ||
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1,880
In-stock
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Fairchild Semiconductor | MOSFET 30V Asymmetric Dual N-Channel Pwr Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 60 A | 10 mOhms | 2 V | 34 nC | Power Stage PowerTrench |
