- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,102
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | 3.5 V | 34 nC | SuperFET II | |||||
|
1,649
In-stock
|
Infineon Technologies | MOSFET 500V 3.5A 2.2Ohm MotIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6 A | 1.05 Ohms | 3 V to 5 V | 34 nC | Enhancement | |||||
|
2,500
In-stock
|
STMicroelectronics | MOSFET N-Channel 620V 1.1 Ohms 5.5A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 1.28 Ohms | 34 nC | Enhancement | ||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 620V 0.98 ohm 6.2A SuperFREDmesh3 | 30 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 6.2 A | 1.15 Ohms | 4.5 V | 34 nC |