- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,804
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4.5 A | 1.6 Ohms | 4 V | 7.5 nC | Enhancement | ||||
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13,004
In-stock
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onsemi | MOSFET PFET 20V 3.2A 85MO | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.4 A | 70 mOhms | 7.5 nC | ||||||
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975
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4.5 A | 1.6 Ohms | 4 V | 7.5 nC | Enhancement | ||||
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5,598
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL PCh -30V 1.7A Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 1.7 A | 270 mOhms | 7.5 nC | Enhancement | |||||
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4,373
In-stock
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onsemi | MOSFET PFET SOT23 20V 3.2A 85MO | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 112 mOhms | - 0.72 V | 7.5 nC | |||||
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2,218
In-stock
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Nexperia | MOSFET 20V Single P-channel Trench MOSFET | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 80 mOhms | - 1 V | 7.5 nC | Enhancement | ||||
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4,775
In-stock
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Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 6.5 mOhms | 1.1 V | 7.5 nC | Enhancement | |||||
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2,744
In-stock
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Texas instruments | MOSFET 20V P-channel NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 21 mOhms | - 1.05 V | 7.5 nC | Enhancement | NexFET | |||
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674
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 21W 510pF 32A 30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 12.6 mOhms | 2.3 V | 7.5 nC | Enhancement | ||||
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38
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 31 A | 12.6 mOhms | 2.3 V | 7.5 nC | Enhancement | ||||
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GET PRICE |
46,340
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 6.3 mOhms | 1.2 V | 7.5 nC | NexFET | |||
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3,000
In-stock
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Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.9 mOhms | 1.4 V | 7.5 nC | Enhancement |
