- Rds On - Drain-Source Resistance :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,419
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.8 mOhms | 1.8 V | 36 nC | NexFET | ||||
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48,920
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 3 V | 14 nC | Enhancement | NexFET | ||||
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14,850
In-stock
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Texas instruments | MOSFET 100V, NCh NexFET | 2.8 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 14.1 mOhms | 2.8 V | 17 nC | Enhancement | ||||
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877
In-stock
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Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 3 V | 14 nC | Enhancement | NexFET | ||||
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37,800
In-stock
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Texas instruments | MOSFET 40V,N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 5.3 mOhms | 1.5 V | 19 nC | Enhancement | |||||
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530
In-stock
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Texas instruments | MOSFET 60V,N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.5 V | 22 nC | Enhancement |