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- Vds - Drain-Source Breakdown Voltage :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
55
In-stock
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IXYS | MOSFET 10 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | 6.5 V | 56 nC | Enhancement | Polar, HiPerFET | ||
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GET PRICE |
42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 9 A | 1.4 Ohms | 4 V | 80 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 12 Amps 1200V 1.3 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 12 A | 1.4 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 6 Amps 900V 1.4 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 1.4 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 6 Amps 800 V 1.4 W Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.4 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 7 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.4 Ohms | Enhancement | HyperFET |
