- Series :
- Packaging :
- Operating Temperature :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | P-Channel | Schottky Diode (Isolated) | 20V | 5.3A (Ta) | 62 mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | 780pF @ 15V | 2.7V, 4.5V | ±12V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | P-Channel | - | 20V | 5.4A (Tc) | 60 mOhm @ 5.4A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 780pF @ 15V | 2.7V, 4.5V | ±12V | 2.5W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | - | 20V | 12A (Ta) | 10 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | 2050pF @ 10V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | - | 20V | 12A (Ta) | 9 mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | 2480pF @ 10V | 2.8V, 10V | ±12V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 15A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | - | 20V | 15A (Ta) | 7 mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | 3100pF @ 10V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V | 2.5W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | 2.7V, 4.5V | ±12V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 10A, 12A | 13.4 mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 7A | 30 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 1340pF @ 16V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 7A | 30 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 1340pF @ 16V | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 9A | 18 mOhm @ 9A, 4.5V | 1V @ 250µA | 63nC @ 5V | 2940pF @ 15V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 20V 3A/2.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | - | Obsolete | 8-SO | 0 | 95 | N and P-Channel | 2W | Standard | 20V | 3A, 2.5A | 125 mOhm @ 1A, 10V | 1V @ 250µA | 25nC @ 10V | 300pF @ 15V |
