- Operating Temperature :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 9A | 18 mOhm @ 9A, 4.5V | 1V @ 250µA | 63nC @ 5V | 2940pF @ 15V | |||
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VIEW | Infineon Technologies | MOSFET N/P-CH 20V 3A/2.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | - | Obsolete | 8-SO | 0 | 95 | N and P-Channel | 2W | Standard | 20V | 3A, 2.5A | 125 mOhm @ 1A, 10V | 1V @ 250µA | 25nC @ 10V | 300pF @ 15V |
