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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,310
In-stock
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IR / Infineon | MOSFET MOSFT 20V 8.7A 22mOhm 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 48 nC | ||||
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3,740
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 22mOhms 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 32 nC | Enhancement | |||
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5,118
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 6.8A 35mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | ||||
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1,555
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 29mOhms 18nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 29 mOhms | 0.7 V | 18 nC | Enhancement | |||
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1,869
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 6.6A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 30 mOhms | 0.7 V | 18 nC | ||||
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12,500
In-stock
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Diodes Incorporated | MOSFET Low Side IntelliFET | 5 V | SMD/SMT | SO-8 | - 40 C | + 125 C | Reel | 1 Channel | N-Channel | 60 V | 2 A | 150 mOhms | 0.7 V | Enhancement | IntelliFET | ||||
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73
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | Enhancement |
