- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
30 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,801
In-stock
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Diodes Incorporated | MOSFET Dual N-Channel | 10 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 400 mA | 1.2 Ohms | Enhancement | ||||||
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4,044
In-stock
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Diodes Incorporated | MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 8.5 A, 6.8 A | 28 mOhms, 45 mOhms | 1.1 V | 11.6 nC | Enhancement | ||||
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2,484
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | ||||
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2,490
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2.5 V | 36 nC | Enhancement | ||||
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16,495
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 20V N-Chan | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 240 mA | 1.8 Ohms | 450 mV | Enhancement | |||||
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4,247
In-stock
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Diodes Incorporated | MOSFET 20V P-CH MOSFET | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.3 A | 38 mOhms | - 1.4 V | 9.1 nC | Enhancement | ||||
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3,532
In-stock
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Diodes Incorporated | MOSFET 350mW 30Vdss | 10 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 300 mA | 1.2 Ohms | Enhancement | ||||||
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2,594
In-stock
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Diodes Incorporated | MOSFET N-Channel | 10 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 300 mA | 1.7 Ohms | Enhancement | ||||||
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5,656
In-stock
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Diodes Incorporated | MOSFET 350mw 30V DUAL | 10 V | SMD/SMT | SOT-353-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 400 mA | 1.2 Ohms | Enhancement | ||||||
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1,400
In-stock
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Diodes Incorporated | MOSFET 30V 300mA | 10 V | SMD/SMT | X2-DFN1006-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 200 mA | 650 mOhms | 0.9 V | Enhancement | |||||
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870
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 17.5 A | 7 mOhms | - 1 V | 140 nC | Enhancement | ||||
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5,782
In-stock
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Diodes Incorporated | MOSFET N-Channel | 10 V | SMD/SMT | X2-DFN1310-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 200 mA | 1.5 Ohms | Enhancement | ||||||
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3,166
In-stock
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Diodes Incorporated | MOSFET 20V 200mA | 10 V | SMD/SMT | X1-DFN1006-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 440 mA | 1.5 Ohms | Enhancement | ||||||
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690
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.5 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | |||
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3,307
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET 0.61W 1788pF 21.5nC | 10 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9 A | 14 mOhms | 0.9 V | 21.5 nC | Enhancement | ||||
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3,350
In-stock
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Diodes Incorporated | MOSFET P-Channel -20V FET 8Vgss 0.35W | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 200 mA | 15 Ohms | - 1 V | Enhancement | |||||
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5,661
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 2.8 Ohms | 1.5 V | 0.9 nC | Enhancement | ||||
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9,905
In-stock
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Diodes Incorporated | MOSFET P-Ch 30V 0.35VnC Enh Mode FET -0.2A | 10 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 10 Ohms | - 1 V | 0.35 nC | Enhancement | ||||
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12,000
In-stock
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Diodes Incorporated | MOSFET N-Ch -20V VDSS 230mA 300mW | 10 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 230 mA | 3 Ohms | Enhancement | ||||||
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3,000
In-stock
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Diodes Incorporated | MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W | 10 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 6.9 A, 6.9 A | 25 mOhms, 25 mOhms | 1 V | 12.6 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.5 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET P-Channel -20V FET 8Vgss 0.35W | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 200 mA | 15 Ohms | - 1 V | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 42 A | 12.5 mOhms | - 400 mV | 103 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 2.8 Ohms | 1.5 V | 0.9 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.8 mOhms | 3 V | 96.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8 mOhms | 3 V | 41.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 17.5 A | 7 mOhms | - 1 V | 140 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 8 mOhms | 3 V | 41.3 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 42 A | 12.5 mOhms | - 400 mV | 103 nC | Enhancement |
