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- Vgs - Gate-Source Voltage :
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- Vds - Drain-Source Breakdown Voltage :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,200
In-stock
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STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 45 A | 80 mOhms | 2.6 V | 105 nC | |||
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39
In-stock
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Wolfspeed / Cree | MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT | 25 V | Through Hole | TO-247-3 | - 55 C | + 135 C | 1 Channel | SiC | N-Channel | 1200 V | 33 A | 80 mOhms | 2.5 V | 90.8 nC | Enhancement |
