- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 10 A (1)
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- 8.7 A (1)
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- 85 A (1)
- 86 A (1)
- 87 A (1)
- 88 A (1)
- 89 A (2)
- 9.1 A (1)
- 9.4 A (1)
- 9.5 A (1)
- 91 A (1)
- 97 A (1)
- 99 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.2 mOhms (1)
- 1.4 mOhms (1)
- 1.6 mOhms (1)
- 1.8 mOhms (2)
- 1.9 mOhms (1)
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- 10 mOhms (2)
- 100 mOhms (2)
- 105 mOhms (1)
- 11 mOhms (2)
- 11.1 mOhms (1)
- 11.2 mOhms (1)
- 11.9 mOhms (1)
- 110 mOhms (1)
- 115 mOhms (1)
- 12 mOhms (2)
- 12.1 mOhms (1)
- 12.5 mOhms (1)
- 12.6 mOhms (1)
- 12.9 mOhms (1)
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- 14 mOhms (2)
- 14.5 mOhms (1)
- 148 mOhms (1)
- 15 mOhms (1)
- 150 mOhms (2)
- 155 mOhms (1)
- 16 mOhms (3)
- 165 mOhms (1)
- 17 mOhms (1)
- 17.5 mOhms (1)
- 18 mOhms (1)
- 18.2 mOhms (1)
- 180 mOhms (2)
- 190 mOhms (1)
- 2 mOhms (3)
- 2.3 mOhms (1)
- 2.4 mOhms (3)
- 2.6 mOhms (1)
- 2.8 mOhms (1)
- 210 mOhms (1)
- 22 mOhms (2)
- 22.5 mOhms (3)
- 23 mOhms (2)
- 235 mOhms (1)
- 24 mOhms (2)
- 24.5 mOhms (1)
- 25 mOhms (1)
- 26 mOhms (3)
- 265 mOhms (1)
- 27 mOhms (1)
- 28 mOhms (1)
- 3 mOhms (1)
- 3.1 mOhms (1)
- 3.2 mOhms (1)
- 3.3 mOhms (4)
- 3.5 mOhms (1)
- 3.8 mOhms (1)
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- 300 mOhms (1)
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- 36 mOhms (1)
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- 4 mOhms (3)
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- 40 mOhms (2)
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- 45 mOhms (2)
- 5.1 mOhms (1)
- 5.3 mOhms (1)
- 5.5 mOhms (2)
- 5.7 mOhms (1)
- 54 mOhms (1)
- 56 mOhms (1)
- 6.5 mOhms (1)
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- 7 mOhms (2)
- 7.2 mOhms (1)
- 7.34 mOhms (2)
- 7.5 mOhms (1)
- 7.9 mOhms (1)
- 75 mOhms (1)
- 77.5 mOhms (1)
- 8 mOhms (3)
- 8.2 mOhms (1)
- 8.4 mOhms (1)
- 8.5 mOhms (1)
- 82 mOhms (3)
- 85 mOhms (1)
- 9 mOhms (3)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (5)
- 103 nC (1)
- 106.7 nC (1)
- 107 nC (1)
- 108 nC (1)
- 120 nC (3)
- 13.3 nC (4)
- 130 nC (1)
- 133.3 nC (1)
- 142 nC (1)
- 143 nC (2)
- 15 nC (1)
- 150 nC (3)
- 16.7 nC (3)
- 160 nC (1)
- 17 nC (1)
- 170 nC (3)
- 18 nC (2)
- 180 nC (2)
- 19 nC (1)
- 190 nC (1)
- 200 nC (2)
- 21 nC (1)
- 210 nC (1)
- 216 nC (1)
- 22 nC (2)
- 22.7 nC (4)
- 23 nC (1)
- 23.3 nC (1)
- 24 nC (1)
- 25 nC (2)
- 26 nC (1)
- 27 nC (2)
- 271 nC (1)
- 28 nC (1)
- 29 nC (1)
- 29.3 nC (1)
- 30 nC (1)
- 300 nC (1)
- 32 nC (2)
- 33 nC (1)
- 33.3 nC (1)
- 34 nC (3)
- 37 nC (2)
- 38 nC (1)
- 39 nC (1)
- 40 nC (5)
- 42 nC (2)
- 43.3 nC (1)
- 44 nC (1)
- 44.7 nC (1)
- 48 nC (1)
- 50 nC (1)
- 54 nC (2)
- 56 nC (2)
- 57 nC (1)
- 58 nC (1)
- 59 nC (2)
- 6.8 nC (1)
- 6.9 nC (1)
- 60 nC (3)
- 61 nC (2)
- 62 nC (2)
- 63 nC (1)
- 65 nC (1)
- 65.3 nC (1)
- 66 nC (1)
- 66.7 nC (1)
- 68 nC (1)
- 69 nC (1)
- 7 nC (1)
- 70 nC (2)
- 72 nC (2)
- 73 nC (1)
- 73.3 nC (1)
- 74 nC (1)
- 75 nC (1)
- 76 nC (1)
- 77 nC (1)
- 79 nC (1)
- 80 nC (1)
- 81 nC (1)
- 83 nC (1)
- 84 nC (1)
- 85 nC (2)
- 86 nC (1)
- 86.7 nC (1)
- 87 nC (1)
- 88 nC (1)
- 89 nC (1)
- 91 nC (3)
- 93 nC (1)
- 93.3 nC (3)
- 95 nC (2)
- 97.3 nC (1)
- Tradename :
148 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,068
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 44nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 3 V | 44 nC | Enhancement | ||||
|
|
4,351
In-stock
|
Infineon Technologies | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 22.5 mOhms | 4 V | 39 nC | |||||
|
|
3,298
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 10mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 88 A | 8 mOhms | 4 V | 120 nC | Enhancement | ||||
|
|
2,633
In-stock
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Infineon Technologies | MOSFET 100V 97A 9mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 2 V to 4 V | 83 nC | Enhancement | ||||
|
|
2,641
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 5.5 V | 28 nC | Enhancement | ||||
|
|
2,262
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | |||||
|
|
3,109
In-stock
|
IR / Infineon | MOSFET 100V 127A 6mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 2 V | 170 nC | Enhancement | ||||
|
|
3,815
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 29mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 38 A | 24 mOhms | 4 V | 37 nC | Enhancement | ||||
|
|
4,084
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 62 A | 12.6 mOhms | 4 V | 89 nC | Enhancement | ||||
|
|
937
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 12.1 mOhms | 3 V | 77 nC | Enhancement | ||||
|
|
2,555
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
|
|
3,000
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.9mOhm 193A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | |||
|
|
1,550
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||
|
|
3,174
In-stock
|
Fairchild Semiconductor | MOSFET TO-252AA N-Ch Power | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 50 V | 14 A | 100 mOhms | Enhancement | ||||||
|
|
1,810
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | |||||
|
|
1,319
In-stock
|
Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 2.5 V | 34 nC | Enhancement | ||||
|
|
3,852
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 69 nC | Enhancement | |||||
|
|
614
In-stock
|
Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
|
|
892
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 42mOhms 133.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | Enhancement | |||||
|
|
1,957
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
|
|
1,149
In-stock
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 6.5 mOhms | 1 V to 2.5 V | 40 nC | Enhancement | ||||
|
|
1,170
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 34 nC | Enhancement | |||||
|
|
686
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 195 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | |||
|
|
799
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 88 nC | StrongIRFET | ||||
|
|
500
In-stock
|
IR / Infineon | MOSFET Automotive MOSFET 10 hm, 143 nC Qg, D2Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 143 nC | Enhancement | |||||
|
|
1,832
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 2 V | 10 nC | Enhancement | ||||
|
|
1,281
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement | |||||
|
|
1,134
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 2 V | 22.7 nC | Enhancement | ||||
|
|
1,716
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 11 A | 265 mOhms | 13.3 nC | Enhancement | |||||
|
|
1,192
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 4 V | 37 nC | Enhancement |
