- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,149
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 6.5 mOhms | 1 V to 2.5 V | 40 nC | Enhancement | |||
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707
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 4 V | 40 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET 40V 42A 4.9 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 40 V | 122 A | 3.8 mOhms | 40 nC | ||||||||
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159
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 116 A | 10 mOhms | 40 nC | Enhancement | ||||
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102
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | Enhancement |
