- Vgs - Gate-Source Voltage :
- Mounting Style :
- Rds On - Drain-Source Resistance :
- Tradename :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,332
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | |||||
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1,696
In-stock
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Vishay Semiconductors | MOSFET 100V 32A 27watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 0.0176 Ohms | 1.5 V | 27 nC | Enhancement | TrenchFET | ||||
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1,957
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | |||||
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76,000
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 4 V | 27 nC | ||||||||
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14,788
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | |||||
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215
In-stock
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Texas instruments | MOSFET 100V 8.7mOhm N-CH Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 10.5 mOhms | 2.8 V | 27 nC | Enhancement | NexFET | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 8 A | 21 mOhms | 1 V | 27 nC | Enhancement | ||||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 60V LL U8FL WF | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 109 A | 4.2 mOhms | 1.2 V | 27 nC | Enhancement | |||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 60V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 109 A | 4.2 mOhms | 1.2 V | 27 nC | Enhancement | |||||
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9,600
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 92 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | |||||
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2,920
In-stock
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Infineon Technologies | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 12 V | 84 A | 8.5 mOhms | 1.9 V | 27 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 12 V | 84 A | 8.5 mOhms | 1.9 V | 27 nC | Enhancement | |||||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 0.0176 Ohms | 1.5 V | 27 nC | Enhancement | TrenchFET | ||||
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3,407
In-stock
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IR / Infineon | MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 93 A | 5.7 mOhms | 2.45 V | 27 nC |