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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRFR15N20DTRPBF
1+
$1.490
10+
$1.260
100+
$1.010
500+
$0.883
6000+
$0.656
RFQ
5,332
In-stock
IR / Infineon MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms 30 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 200 V 17 A 165 mOhms 5.5 V 27 nC Enhancement
IRFR15N20DPBF
1+
$1.490
10+
$1.260
100+
$1.010
500+
$0.883
RFQ
1,957
In-stock
IR / Infineon MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms 30 V SMD/SMT TO-252-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 17 A 165 mOhms 5.5 V 27 nC Enhancement
IRFR4105ZTRPBF
1+
$0.970
10+
$0.824
100+
$0.633
500+
$0.559
2000+
$0.392
RFQ
76,000
In-stock
Infineon Technologies MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg   SMD/SMT TO-252-3   + 175 C Reel 1 Channel Si N-Channel 55 V 30 A 24.5 mOhms 4 V 27 nC  
IRLR3802PBF
1+
$1.390
10+
$1.180
100+
$0.906
500+
$0.801
RFQ
2,920
In-stock
Infineon Technologies MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC 12 V SMD/SMT TO-252-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 12 V 84 A 8.5 mOhms 1.9 V 27 nC Enhancement
IRLR3802TRPBF
6000+
$0.353
24000+
$0.331
VIEW
RFQ
IR / Infineon MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC 12 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 12 V 84 A 8.5 mOhms 1.9 V 27 nC Enhancement
IRFR3711ZTRLPBF
1+
$1.170
10+
$0.589
100+
$0.496
500+
$0.468
3000+
$0.404
RFQ
3,407
In-stock
IR / Infineon MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg   SMD/SMT TO-252-3   + 175 C Reel 1 Channel Si N-Channel 20 V 93 A 5.7 mOhms 2.45 V 27 nC  
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