- Vgs - Gate-Source Voltage :
- Mounting Style :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,965
In-stock
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Siliconix / Vishay | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 14 nC | Enhancement | TrenchFET | |||
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2,261
In-stock
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STMicroelectronics | MOSFET Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 4.5 V | 14 nC | |||||
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1,497
In-stock
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IR / Infineon | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 24 A | 26 mOhms | 14 nC | Enhancement | |||||
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3,300
In-stock
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onsemi | MOSFET NFET DPAK 60V 17A 64MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17 A | 66 mOhms | 2.5 V | 14 nC | |||||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 20V 8A 18W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 0.0235 Ohms | 0.45 V | 14 nC | Enhancement | TrenchFET | |||
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2,870
In-stock
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Vishay Semiconductors | MOSFET 20V 8A 3.6W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 0.025 Ohms | 0.4 V | 14 nC | Enhancement | TrenchFET | |||
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1,775
In-stock
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Fairchild Semiconductor | MOSFET 80/20V 1000A N-chnl PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 25 A | 45 mOhms | 2 V | 14 nC | Enhancement | ||||
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897
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 45A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 8.6 mOhms | 14 nC | Enhancement | OptiMOS | ||||
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2,110
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 65A 10mOhm 10nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 10 mOhms | 1 V | 14 nC | |||||||
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543
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.027 Ohm typ 25A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 4.5 V | 14 nC | |||||
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812
In-stock
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STMicroelectronics | MOSFET Nchanl 100V 0025 Ohm typ 25 A Pwr MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 19 A | 35 mOhms | 4.5 V | 14 nC | |||||
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354
In-stock
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IR / Infineon | MOSFET MOSFT 20V 60A 8.4mOhm 9.3nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 60 A | 8.4 mOhms | 2.55 V | 14 nC | |||||||
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1,634
In-stock
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IR / Infineon | MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9.5 mOhms | 2.25 V | 14 nC | |||||||
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114
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | Micro-8 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 35 mOhms | 0.7 V | 14 nC | Enhancement |
