- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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897
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 45A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 8.6 mOhms | 14 nC | Enhancement | OptiMOS | ||||
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543
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.027 Ohm typ 25A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 4.5 V | 14 nC | |||||
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812
In-stock
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STMicroelectronics | MOSFET Nchanl 100V 0025 Ohm typ 25 A Pwr MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 19 A | 35 mOhms | 4.5 V | 14 nC | |||||
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114
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | Micro-8 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 35 mOhms | 0.7 V | 14 nC | Enhancement |
