- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,608
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3 mOhms | 1.2 V | 78 nC | Enhancement | OptiMOS | |||
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34
In-stock
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IXYS | MOSFET 120 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 120 A | 7.7 mOhms | 4 V | 78 nC | Enhancement | TrenchT2 | ||||
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312
In-stock
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Texas instruments | MOSFET 100V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 50 A | 3.4 mOhms | 2.7 V | 78 nC | NexFET | ||||
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2,460
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3 mOhms | 1.2 V | 78 nC | Enhancement | OptiMOS |
